Written in English
|Statement||by Thurman Dwight Sims.|
|The Physical Object|
|Pagination||xi, 59 leaves :|
|Number of Pages||59|
Investigation of Cu 2ZnSnS 4-Based Thin Film Solar Cells Using Abundant Materials Takeshi KOBAYASHI, Kazuo JIMBO, Kazuyuki TSUCHIDA, Shunsuke SHINODA, Taisuke OYANAGI and Hironori KATAGIRI Electrical & Mechanical System Engineering Advanced Course, Nagaoka National College of Technology, Nishikatakai, Nagaoka, Niigata , JapanCited by: ZnS with a high refractive index and transmittance in the visible range can be applied in the fields of infrared windows, sensors, solar cells and other optoelectronics, so it has attracted many researcher’s attention,,. Non-toxic ZnS has low cost, wider band gap than CdS ( eV) used widely and has higher lattice matching with CIS (CIGS).Cited by: 1. Lee W J, Yu H J, Wi J H, Cho D H, Han W S, Yoo J, Yi Y, Song J H and Chung Y D Behavior of photocarriers in the light-induced metastable state in the p–n heterojunction of a Cu(In,Ga)Se2 solar cell with CBD-ZnS buffer layer ACS Appl. Mater. Interfaces 8 Cited by: 1. The full text of this article hosted at is unavailable due to technical difficulties.
The photovoltaic properties of Cu 2 O-based heterojunction solar cells were improved using an n-type layer composed of thin films in a binary oxide semiconductor. This layer was prepared by a low-damage deposition method that applies a system for multi-chamber radio frequency (r.f.) power superimposed direct current (d.c.) magnetron : Toshihiro Miyata, Hiroki Tokunaga, Kyosuke Watanabe, Noriaki Ikenaga, Tadatsugu Minami. Investigation of silicon heterojunction solar cells by photoluminescence under DC-bias Guillaume Courtois1,2a, Parsathi Chatterjee3, Veinardi Suendo4, Antoine Salomon1, and Pere Roca i Cabarrocas2 1 Total Energies Nouvelles, La D´´ efense, France 2 LPICM, CNRS – Cited by: 1. Si:H(p+) heterojunction solar cell ( % and % respectively) . Hence, in this work, we have selected the n-type crystalline Si substrate for the cell structure. A detailed investigation of cell parameters using AMPS package provides a better understanding of the role of each layer and main parameters that control the be-. Solid-state dye-sensitized and bulk heterojunction solar cells using TiO2 and ZnO nanostructures: recent progress and new concepts at the borderline. Polymer International , 61 (3), DOI: /pi Brian R. Saunders. Hybrid polymer/nanoparticle solar cells Cited by:
We fabricated Cu(In,Ga)Se2 (CIGS) solar cells with a chemical bath deposition (CBD)-ZnS buffer layer grown with varying ammonia concentrations in aqueous solution. The solar cell performance was degraded with increasing ammonia concentration, due to actively dissolved Zn atoms during CBD-ZnS precipitation. These formed interfacial defect states, such as hydroxide species in the CBD-ZnS film Cited by: The effect of buffer layer (CdS and ZnS) thickness on the electrical performances of CZTS solar cell is analyzed in this part. It has been varied between 30 and nm with a fixed doping concentration at 1E17 and 1E18 cm −3 for CdS and ZnS respectively as it shown in Fig. 4, Fig. 5.A strong dependency has been observed on buffer layer thickness for the performances of CZTS solar : Benzetta Abd El Halim, Abderrezek Mahfoud, Djeghlal Mohammed Elamine. type zinc oxide (n- ZnO) and p- type Si (p -Si) based single heterojunction solar cell (SHJSC) is one of the several attempts to conventional Si single homojunction solar cell replace technology. The efficiency of heterojunction solar cells depend largely on the interfacial properties between absorber and buffer layers. The wider bandgap of ZnS enables high energy incident photons to reach the window-absorber junction, enhancing the blue response of the photovoltaic cells and thus contributes to a better cell performance .Cited by: 1.